c sot23 npn silicon planar rf transistors issue 4 ? march 2001 partmarking details ? bfs17l - e1l bfs17h - e1h absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 25 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 2.5 v peak pulse current i cm 50 ma continuous collector current i c 25 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo 10 10 na a v cb =10v, i e =0 v cb =10v, i e =0, t amb = 100c static forward current transfer ratio h fe bfs17l 25 100 i c =2.0ma, v ce =1.0v bfs17h 70 200 i c =2.0ma, v ce =1.0v 20 125 i c =25ma, v ce =1.0v transition frequency f t 1.0 1.3 ghz ghz i c =2.0ma, v ce =5.0v f=500mhz i c =25ma, v ce =5.0v f=500mhz feedback capacitance -c re 0.85 pf i c =2.0ma, v ce =5v, f=1mhz output capacitance c obo 1.5 pf v cb =10v, f=1mhz input capacitance c ibo 2.0 pf v eb =0.5v, f=1mhz noise figure n 4.5 db i c =2.0ma, v ce =5.0v r s =50 ? , f=500mhz intermodulation distortion d im -45 db i c =10ma, v ce =6.0v r l =37.5 ? ,t amb =25c v o =100mv at f p =183mhz v o =100mv at f q =200mhz measured at f (2q-p) =217mhz bfs17l bfs17h b e spice parameter data is available upon request for this device tba bfs17h and bfs17l are obsolete please use bfs17n
bfs17l bfs17h typical characteristics f t v i c i c - collector current (ma) f t - (ghz) 1 10 10m 100 1m i c - collector current (a) h fe v i c h f e - norma l ised ga i n 20 40 60 80 100 0.1 f=400mhz 1000 1 2 3 v ce - (v) c re v v ce c re - ( p f ) 0 10 20 30 0.5 1.0 1.5 2.0 v ce =10v 0 11 0 v ce =10v v ce =5v 100m f=1mhz bfs17h and bfs17l are obsolete please use bfs17n
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